Business

November 2, 2012

Northrop Grumman begins sampling new gallium nitride MMIC product line

REDONDO BEACH, Calif. – Northrop Grumman has developed a line of gallium nitride Monolithic Microwave Integrated Circuits for military and commercial uses.

These devices represent the first commercial availability of GaN-based components from the company.

Initial engineering evaluation sampling is underway with quantities of three GaN MMIC products. They were developed for defense and commercial ground satellite communication terminal markets and the commercial wireless infrastructure market, said Frank Kropschot, general manager of the Microelectronics Products and Services (MPS) business unit of Northrop Grumman Aerospace Systems.

“We have been producing gallium nitride-based devices since 2002 at Northrop Grumman’s dedicated wafer fabrication facility in Redondo Beach, which the Department of Defense has designated as a Trusted Foundry,” Kropschot said. “We have achieved outstanding performance and reliability from our high-frequency gallium nitride process and are extremely confident that these GaN MMICs will improve performance, efficiency and bandwidth for military and commercial users.”

The initial set of three MMICs has these performance characteristics:

  • The APN149 is a GaN high electron mobility transistor MMIC power amplifier chip that operates between 18 and 23 gigahertz. This power amplifier provides 20 decibels of linear gain, +36 dBm (4 watts) of output power at 1 dB gain compression and +38 dBm (6.3 W) in saturation with Physical Address Extension of greater than 30 percent.
  • The APN180 is a GaN HEMT MMIC power amplifier chip that operates between 27 and 31 GHz. This power amplifier provides 21 dB of linear gain, +38 dBm (6.3 W) of output power at 1 dB gain compression and +39 dBm (8 W) in saturation with PAE of 30 percent at midband. For less demanding applications, the APN180 can be operated from a drain voltage as low as +20V while still producing +37 dBm (5 W) of saturated output power.
  • The APN167 is a GaN HEMT MMIC power amplifier chip that operates between 43 and 46 GHz. This power amplifier provides 20 dB of gain, +35.5 dBm (3.5 W) of output power at 1 dB gain compression and +38.5 dBm (7 W) in saturation with PAE of 19 percent at midband.

“These new products are the first of several we plan to introduce into the marketplace during the next few months as we roll out a new family of products using Northrop Grumman’s 0.2┬Ám GaN HEMT process developed partially under the Defense Advanced Research Projects Agency’s Wide Band Gap Semiconductors for Radio Frequency program,” Kropschot said. He added the DARPA program was the first of several key GaN technology development contracts awarded to Northrop Grumman beginning in 2002.
He noted that GaN devices are key components the new low-cost terminals recently introduced by an industry team consisting of Northrop Grumman, Lockheed Martin Space Systems and TeleCommunication Systems.

More information and advance data sheets on the gallium nitride product line are available online at www.as.northropgrumman.com\mps. Limited engineering prototype samples are available from stock to qualified customers by contacting MPS at as-mps.sales@ngc.com.

Northrop Grumman is a leader in the design and fabrication of high-speed components for established and emerging commercial markets, including cellular and broadband wireless systems as well as aerospace, defense and scientific applications. The company also offers foundry services that utilize advanced gallium nitride, gallium arsenide and indium phosphide semiconductor manufacturing processes.




All of this week's top headlines to your email every Friday.


 
 

 

Northrop Grumman’s AstroMesh reflector successfully deploys for NASA’s SMAP satellite

The NASA Jet Propulsion Laboratory successfully deployed the mesh reflector and boom aboard the Soil Moisture Active Passive spacecraft, a key milestone on its mission to provide global measurements of soil moisture. Launched Jan. 31, SMAP represents the future of Earth Science by helping researchers better understand our planet. SMAP’s unmatched data capabilities are enabled...
 
 

News Briefs February 27, 2015

Ukraine will start pulling back heavy weapons in the east Ukraine’s military says it will start pulling back its heavy weapons from the front line with Russian-backed separatists as required under a cease-fire agreement. The Defense Ministry said in a statement Feb. 26 that it reserved the right to revise its withdrawal plans in the...
 
 
NASA photograph by Brian Tietz

NASA offers space tech grants to early career university faculty

NASA photograph by Brian Tietz Tensegrity research is able to simulate multiple forms of locomotion. In this image, a prototype tensegrity robot reproduces forward crawling motion. NASA’s Space Technology Mission Director...
 

 
navy-china

USS Fort Worth conducts CUES with Chinese Navy

The littoral combat ship USS Fort Worth (LCS 3) practiced the Code for Unplanned Encounters at Sea (CUES) with the People’s Liberation Army-Navy Jiangkai II frigate Hengshui (FFG 572) Feb. 23 enhancing the professional ma...
 
 

AEGIS tracks, simulates engagement of three short-range ballistic missiles

The Missile Defense Agency and sailors aboard the guided-missile destroyers USS Carney (DDG 64), USS Gonzalez (DDG 66), and USS Barry (DDG 52) successfully completed a flight test involving the Aegis Ballistic Missile Defense weapon system. At approximately 2:30 a.m., EST, Feb. 26, three short-range ballistic missile targets were launched near simultaneously from NASA’s Wallops...
 
 

DOD seeks novel ideas to shape its technological future

The Defense Department is seeking novel ideas to shape its future, and officials are looking to industry, small business, academia, start-ups, the public – anyone, really – to boost its ability to prevail against adversaries whose access to technology grows daily. The program, called the Long-Range Research and Development Plan, or LRRDP, began with an...
 




0 Comments


Be the first to comment!


Leave a Reply

Your email address will not be published. Required fields are marked *

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <strike> <strong>