Business

November 2, 2012

Northrop Grumman begins sampling new gallium nitride MMIC product line

REDONDO BEACH, Calif. – Northrop Grumman has developed a line of gallium nitride Monolithic Microwave Integrated Circuits for military and commercial uses.

These devices represent the first commercial availability of GaN-based components from the company.

Initial engineering evaluation sampling is underway with quantities of three GaN MMIC products. They were developed for defense and commercial ground satellite communication terminal markets and the commercial wireless infrastructure market, said Frank Kropschot, general manager of the Microelectronics Products and Services (MPS) business unit of Northrop Grumman Aerospace Systems.

“We have been producing gallium nitride-based devices since 2002 at Northrop Grumman’s dedicated wafer fabrication facility in Redondo Beach, which the Department of Defense has designated as a Trusted Foundry,” Kropschot said. “We have achieved outstanding performance and reliability from our high-frequency gallium nitride process and are extremely confident that these GaN MMICs will improve performance, efficiency and bandwidth for military and commercial users.”

The initial set of three MMICs has these performance characteristics:

  • The APN149 is a GaN high electron mobility transistor MMIC power amplifier chip that operates between 18 and 23 gigahertz. This power amplifier provides 20 decibels of linear gain, +36 dBm (4 watts) of output power at 1 dB gain compression and +38 dBm (6.3 W) in saturation with Physical Address Extension of greater than 30 percent.
  • The APN180 is a GaN HEMT MMIC power amplifier chip that operates between 27 and 31 GHz. This power amplifier provides 21 dB of linear gain, +38 dBm (6.3 W) of output power at 1 dB gain compression and +39 dBm (8 W) in saturation with PAE of 30 percent at midband. For less demanding applications, the APN180 can be operated from a drain voltage as low as +20V while still producing +37 dBm (5 W) of saturated output power.
  • The APN167 is a GaN HEMT MMIC power amplifier chip that operates between 43 and 46 GHz. This power amplifier provides 20 dB of gain, +35.5 dBm (3.5 W) of output power at 1 dB gain compression and +38.5 dBm (7 W) in saturation with PAE of 19 percent at midband.

“These new products are the first of several we plan to introduce into the marketplace during the next few months as we roll out a new family of products using Northrop Grumman’s 0.2µm GaN HEMT process developed partially under the Defense Advanced Research Projects Agency’s Wide Band Gap Semiconductors for Radio Frequency program,” Kropschot said. He added the DARPA program was the first of several key GaN technology development contracts awarded to Northrop Grumman beginning in 2002.
He noted that GaN devices are key components the new low-cost terminals recently introduced by an industry team consisting of Northrop Grumman, Lockheed Martin Space Systems and TeleCommunication Systems.

More information and advance data sheets on the gallium nitride product line are available online at www.as.northropgrumman.com\mps. Limited engineering prototype samples are available from stock to qualified customers by contacting MPS at as-mps.sales@ngc.com.

Northrop Grumman is a leader in the design and fabrication of high-speed components for established and emerging commercial markets, including cellular and broadband wireless systems as well as aerospace, defense and scientific applications. The company also offers foundry services that utilize advanced gallium nitride, gallium arsenide and indium phosphide semiconductor manufacturing processes.




All of this week's top headlines to your email every Friday.


 
 

 

Headlines September 29, 2014

News: U.S. military limits warplanes used for Islamic State bombings - The U.S. is relying mostly on warplanes already positioned in the region for its air war against the Islamic State, as opposed to dispatching a major buildup of aerial forces that happened in previous campaigns.   Business: At DOD, it’s use-it-or-lose-it season - As fiscal 2014...
 
 

News Briefs September 29, 2014

Navy awards ship design grant to UNO The University of New Orleans has received a $210,000 grant from the Navy s Office of Naval Research to test information gathering and analysis techniques intended to improve warship design. The goal for warship designers is to produce a vessel that can be repurposed numerous times throughout its...
 
 
Courtesy photograph

TACP-M ties it all together

Air National Guard photograph by SSgt. Lealan Buehrer Tactical air control party specialists with the 169th Air Support Operations Squadron survey an enemy-controlled landing zone before calling in close-air support Aug. 14, 20...
 

 
Air Force photograph by A1C Thomas Spangler

Nellis aggressor squadron inactivated

Air Force photograph by A1C Thomas Spangler SSgt. Justin White signals to Maj. Sam Joplin to begin taxiing a 65th Aggressor Squadron F-15 Eagle to the runway Sept. 18, 2014, at Nellis Air Force Base Nev. The roles and responsib...
 
 
Army photograph by SSgt. Mary S. Katzenberger

82nd Airborne helps commemorate 70th Anniversary of Operation Market Garden

Army photograph by SSgt. Mary S. Katzenberger A paratrooper assigned to the 82nd Airborne Division, reflects near the grave of a British paratrooper at the Arnhem Oosterbeek War Cemetery, Sept. 14, 2014, in the Netherlands. The...
 
 

Raytheon awarded $251 million Tomahawk missile contract

The U.S. Navy has awarded Raytheon a $251 million contract to procure Tomahawk Block IV tactical cruise missiles for fiscal year 2014 with an option for 2015. The contract calls for Raytheon to build and deliver Tomahawk Block IV cruise missiles to the U.S. Navy and U.K. Royal Navy. Raytheon will also conduct flight tests...
 




0 Comments


Be the first to comment!


Leave a Reply

Your email address will not be published. Required fields are marked *

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <strike> <strong>