Business

February 26, 2014

Raytheon continues to drive GaN evolution through cutting edge innovation

Raytheon announced Feb. 25 that under the DARPA Microsystems Technology Office Wide Bandgap Semiconductor Program, the company has systematically matured Gallium Nitride from basic material to transistors, Monolithic Microwave Integrated Circuits, Transmit/Receive Modules and finally Transmit/Receive Integrated Multichannel Modules, enabling game changing system performance for the Defense Department.

This is the latest milestone for Raytheon’s GaN technology which was honored by the Office of the Secretary of Defense in June for successful completion of a Defense Production Act Title III Gallium Nitride production improvement program, culminating over a decade of Government and Raytheon investment in GaN RF circuit technology.

GaN technology significantly extends the warfighter’s capability providing radar, electronic warfare, navigation, and communication systems with more affordable solutions and increased capability.

“Raytheon continues to be a driving force in the evolution of GaN technology and it is exciting to be part of this new frontier that directly translates to the warfighter,” said Joe Biondi, vice president of Advanced Technology for Raytheon’s Integrated Defense Systems business. “Through our partnership with DARPA we continue to explore new ways to leverage GaN’s limitless capabilities to increase performance and reliability of defense systems.”

Raytheon as part of the DARPA MTO Wide Bandgap Semiconductor Program, with the support of a Navy, Air Force and Army technology team, has achieved several first of their kind milestones:

  • Demonstrated record setting X-band GaN Power Amplifier MMIC Performance. The higher efficiency and power of these MMICs enables more affordable systems with higher capability.
  • Completed first ever X-band GaN T/R module demonstrations.  This involved extensive, successful design verification testing over a range of relevant operating conditions demonstrating the maturity of the GaN technology.
  • Completed first ever X-band GaN TRIMM demonstration which proved GaN in a relevant environment. This involved extensive testing in a relevant array environment including a 1,000 hour operating test in a laboratory pilot array and an insertion validation in a production radar, proving the TRIMM is ready for transition to production.



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